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The effect of γ-ray irradiation on the SOT magnetic films and Hall devices

Tengzhi Yang Yan Cui Yanru Li Meiyin Yang Jing Xu Huiming He Shiyu Wang Jing Zhang Jun Luo

半导体学报（英文版）2021，Vol.42Issue(2)：109-113,5.

半导体学报（英文版）2021，Vol.42Issue(2)：109-113,5.DOI:10.1088/1674-4926/42/2/024102

The effect of γ-ray irradiation on the SOT magnetic films and Hall devices

Tengzhi Yang ¹Yan Cui ²Yanru Li ¹Meiyin Yang ¹Jing Xu ²Huiming He ¹Shiyu Wang ¹Jing Zhang ³Jun Luo³

作者信息

1. Key Laboratory of Microelectronic Devices & Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences(IMECAS),Beijing 100029,China
2. University of Chinese of Academy Sciences(UCAS),Beijing 100049,China
3. School of Information Science and Technology,North China University of Technology,Beijing 100041,China
折叠

摘要

关键词

SOT-MRAM/y-ray irradiation/TID effect/anomalous Hall effect

Key words

SOT-MRAM/y-ray irradiation/TID effect/anomalous Hall effect

引用本文复制引用

Tengzhi Yang,Yan Cui,Yanru Li,Meiyin Yang,Jing Xu,Huiming He,Shiyu Wang,Jing Zhang,Jun Luo..The effect of γ-ray irradiation on the SOT magnetic films and Hall devices[J].半导体学报（英文版）,2021,42(2):109-113,5.

基金项目

This work is financially supported by Strategic Priority Re-search Program of the CAS(Grant No.XDA18000000)and Youth Innovation Promotion Association of CAS(Grant No.2015097). （Grant No.XDA18000000）

半导体学报（英文版）

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