红外与毫米波学报2021，Vol.40Issue(1)：7-11,5.DOI:10.11972/j.issn.1001-9014.2021.01.002
InGaAsP/InGaAs双结太阳电池的开路电压损耗抑制
Reducing Voc loss in InGaAsP/InGaAs dual-junction solar cells
摘要
Abstract
Smaller Voc of 1. 0 eV/0. 75 eV InGaAsP/InGaAs double-junction solar cell(DJSC)than the Voc sum ofindividual subcells has been observed,and there is little information of the origin of such Voc loss and how to mini-mize it. In this paper,it is disclosed that the dominant mechanism of minority-carrier transport at back-surface-field(BSF)/base interface of the bottom subcell is thermionic emission,instead of defect-induced recombination, which is in contrast to previous reports. It also shows that both InP and InAlAs cannot prevent the zinc diffusion effectively. In addition,intermixing of major Ⅲ-Ⅴ element occurs as a result of increasing thermal treatment. To suppress the above negative effects,an initial novel InP/InAlAs superlattice(SL)BSF layer is then proposed and employed in bottom InGaAs subcell. The Voc of fabricated cells reach 997. 5 mV,and a reduction of 30 mV in Voc loss without lost of Jsc,compared with the results of conventional InP BSF configuration,is achieved. It would benefit the overall Voc for further four-junction solar cells.关键词
背场/InGaAsP/InGaAs双结电池/开路电压/超晶格Key words
Back-surface field/InGaAsP/InGaAs dual-junction/open-circuit voltage/superlattice.分类
信息技术与安全科学引用本文复制引用
陆宏波,李欣益,李戈,张玮,胡淑红,戴宁,杨瑰婷..InGaAsP/InGaAs双结太阳电池的开路电压损耗抑制[J].红外与毫米波学报,2021,40(1):7-11,5.基金项目
Supported by the National Nature Science Foundation of China(61474076 and 61704106),the Young Elite Scientist Sponsorship Pro-gram by China Association for Science and Technology(2017QNRC001)and Shanghai Rising-Star Program(18QB1402500 and 19QB1403800). （61474076 and 61704106）
