中国光学2021，Vol.14Issue(1)：196-205,10.DOI:10.37188/CO.2020-0062
悬空氧化铟纳米线晶体管制备与光电性能表征
Fabrication and optoelectronic characterization of suspended In2O3 nanowire transistors
摘要
Abstract
One-dimensional(ID)semiconductor nanowires have shown outstanding performance in nano-electronics and nano-photonics.However,the electrical properties of the nanowire transistors are very sensit-ive to interactions between the nanowires and substrates.Optimizing the device structure can improve the electrical and photodetection performance of nanowire transistors.We report a suspended In2O3 nanowire transistor fabricated by one-step lithography,showing a high mobility of 54.6 cm2V-ls-1 and a low sub-threshold swing of 241.5 mVdec-1.As an ultraviolet photodetector,the phototransistor shows an extremely low dark current(-10-13 A)and a high responsivity of 1.6xl05 A?W-1.This simple and effective method of suspending the channel material of a transistor can be widely used in manufacturing high-performance micro-nano devices.关键词
纳米线/In2O3/悬空器件/紫外探测器Key words
nanowire/In2O3/suspension device/UV photodetector分类
数理科学引用本文复制引用
姜亦杨,陈艳,王旭东,赵东洋,林铁,沈宏,孟祥建,汪琳,王建禄..悬空氧化铟纳米线晶体管制备与光电性能表征[J].中国光学,2021,14(1):196-205,10.基金项目
国家自然科学基金项目(No.61521001,No.61574151) （No.61521001,No.61574151）
国家重点基础研究发展规划项目(No.2016YFA0203900,No.2016YFB0400801) （No.2016YFA0203900,No.2016YFB0400801）
中国科学院重点资助项目(No.QYZDB-SSW-JSC016,No.QYZDY-SSW-JSC042) （No.QYZDB-SSW-JSC016,No.QYZDY-SSW-JSC042）
