中国光学2021，Vol.14Issue(1)：206-212,7.DOI:10.37188/CO.2020-0153
高比探测率和高速石墨烯/n-GaAs复合结构的光电探测器
Hybrid graphene/n-GaAs photodiodes with high specific detectivity and high speed
摘要
Abstract
Hybrid graphene/semiconductor phototransistors have attracted great attention because of their ul-trahigh responsivity.However,the specific detectivity(D')for such hybrid phototransistors obtained from source-drain electrodes is assumed to be 1lf noise.In this paper,D'of-1.82×1011 Jones was achieved from source-gate electrodes.Compared with the same device which was measured from source-drain electrodes,D'was improved by-500 times.This could be attributed to the carrier trapping and detrapping processes having been screened by the Schottky barrier at the interface.The rise and decay times were 4 ms and 37 ms,respectively.The temporal response speed also correspondingly improved by-2 orders of magnitude.This work provides an alternative route toward light photodetectors with high specific detectivity and speed.关键词
石墨烯/光二极管/比探测率/响应速度Key words
graphene/photodiode/specific detectivity/response speed分类
信息技术与安全科学引用本文复制引用
田慧军,刘巧莉,岳恒,胡安琪,郭霞..高比探测率和高速石墨烯/n-GaAs复合结构的光电探测器[J].中国光学,2021,14(1):206-212,7.基金项目
国家重点研发计划资助项目(No.2017YFF0104801) （No.2017YFF0104801）
国家自然科学基金资助项目(No.61804012) （No.61804012）
