首页|期刊导航|半导体学报（英文版）|Indium-gallium-zinc-oxide thin-film transistors: Materials, devices, and applications
半导体学报（英文版）2021，Vol.42Issue(3)：21-39,19.DOI:10.1088/1674-4926/42/3/031101
Indium-gallium-zinc-oxide thin-film transistors: Materials, devices, and applications
Indium-gallium-zinc-oxide thin-film transistors: Materials, devices, and applications
摘要
关键词
indium-gallium-zinc-oxide/thin-film transistors/flat panel displays/sensors/flexible electronics/neuromorphic systemsKey words
indium-gallium-zinc-oxide/thin-film transistors/flat panel displays/sensors/flexible electronics/neuromorphic systems引用本文复制引用
Ying Zhu,Yongli He,Shanshan Jiang,Li Zhu,Chunsheng Chen,Qing Wan..Indium-gallium-zinc-oxide thin-film transistors: Materials, devices, and applications[J].半导体学报（英文版）,2021,42(3):21-39,19.基金项目
The authors are grateful for the financial support from the National Natural Science Foundation of China (Grant No.62074075,61834001),and the National Key R&D Program of China (Grant No.2019YFB2205400). （Grant No.62074075,61834001）
