首页|期刊导航|半导体学报（英文版）|A 1.2 V, 3.1％ 3σ-accuracy thermal sensor analog front-end circuit in 12 nm CMOS process

A 1.2 V, 3.1％ 3σ-accuracy thermal sensor analog front-end circuit in 12 nm CMOS process

Liqiong Yang Linfeng Wang Junhua Xiao Longbing Zhang Jian Wang

半导体学报（英文版）2021，Vol.42Issue(3)：59-64,6.

半导体学报（英文版）2021，Vol.42Issue(3)：59-64,6.DOI:10.1088/1674-4926/42/3/032401

A 1.2 V, 3.1％ 3σ-accuracy thermal sensor analog front-end circuit in 12 nm CMOS process

Liqiong Yang ¹Linfeng Wang ²Junhua Xiao ³Longbing Zhang ¹Jian Wang²

作者信息

1. State Key Laboratory of Computer Architecture,Institute of Computing Technology,Chinese Academy of Sciences,Beijing 100190,China
2. University of Chinese Academy of Sciences,Beijing 100049,China
3. Loongson Technology Corporation Limited,Beijing 100095,China
折叠

摘要

关键词

CMOS FinFET process/microprocessor/thermal sensor/BGR/4-stage folded

Key words

CMOS FinFET process/microprocessor/thermal sensor/BGR/4-stage folded

引用本文复制引用

Liqiong Yang,Linfeng Wang,Junhua Xiao,Longbing Zhang,Jian Wang..A 1.2 V, 3.1％ 3σ-accuracy thermal sensor analog front-end circuit in 12 nm CMOS process[J].半导体学报（英文版）,2021,42(3):59-64,6.

基金项目

This work was supported by the National Natural Science Foundation of China (No.61432016 and No.61521092),the Key Program of the Chinese Academy of Sciences (ZDRW-XH-2017-1),and the Strategic Priority Research Program of the Chinese Academy of Sciences (No.XDC05020000). （No.61432016 and No.61521092）

半导体学报（英文版）

OACSCDCSTPCDEI

ISSN：1674-4926

访问量0

下载量0

段落导航