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Energy band adjustment of 808 nm GaAs laser power converters via gradient doping

Yingjie Zhao Shan Li Huixue Ren Shaojie Li Peide Han

半导体学报（英文版）2021，Vol.42Issue(3)：79-85,7.

半导体学报（英文版）2021，Vol.42Issue(3)：79-85,7.DOI:10.1088/1674-4926/42/3/032701

Energy band adjustment of 808 nm GaAs laser power converters via gradient doping

Yingjie Zhao ¹Shan Li ²Huixue Ren ¹Shaojie Li ²Peide Han¹

作者信息

1. State Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China
2. School of Electronic,Electrical and Communication Engineering,University of Chinese Academy of Sciences,Beijing 100049,China
折叠

摘要

关键词

gradient doping/laser power converters (LPCs)/energy band adjustment/numerical simulation

Key words

gradient doping/laser power converters (LPCs)/energy band adjustment/numerical simulation

引用本文复制引用

Yingjie Zhao,Shan Li,Huixue Ren,Shaojie Li,Peide Han..Energy band adjustment of 808 nm GaAs laser power converters via gradient doping[J].半导体学报（英文版）,2021,42(3):79-85,7.

基金项目

This work was supported by the National Key R&D Program of China (No.2018YFB1500500) and also supported by Ally Fund of Chinese Academy of Sciences (No.Y072051002). （No.2018YFB1500500）

半导体学报（英文版）

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ISSN：1674-4926

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