纳微快报（英文）2021，Vol.13Issue(5)：192-203,12.
Single-Photon Sources Based on Novel Color Centers in Silicon Carbide P–I–N Diodes: Combining Theory and Experiment
Single?Photon Sources Based on Novel Color Centers in Silicon Carbide P–I–N Diodes: Combining Theory and Experiment
摘要
Abstract
Point defects in the crystal lattice of SiC, known as color centers, have recently emerged as one of the most promising single-photon emitters for non-classical light sources. However, the search for the best color center that satisfies all the requirements of practical applications has only just begun. Many color centers in SiC have been recently discovered but not yet identified. Therefore, it is extremely challenging to understand their optoelectronic properties and evaluate their potential for use in practical single-photon sources. Here, we present a theoretical approach that explains the experiments on single-photon electroluminescence (SPEL) of novel color cent-ers in SiC p–i–n diodes and gives the possibility to engineer highly efficient single-photon emitting diodes based on them. Moreover, we develop a novel method of determining the electron and hole capture cross sections by the color center from experimental measurements of the SPEL rate and second-order coherence. Unlike other methods,the developed approach uses the experimental results at the single defect level that can be easily obtained as soon as a single-color center is identified in the i-type region of the SiC p–i–n diode.关键词
Color centers/Electron capture cross section/Single-photon emitting diodes/Single-photon electroluminescence/Charge state controlKey words
Color centers/Electron capture cross section/Single-photon emitting diodes/Single-photon electroluminescence/Charge state control引用本文复制引用
Igor A.Khramtsov,Dmitry Yu.Fedyanin..Single-Photon Sources Based on Novel Color Centers in Silicon Carbide P–I–N Diodes: Combining Theory and Experiment[J].纳微快报（英文）,2021,13(5):192-203,12.基金项目
The authors acknowledge Matthias Widmann and Sang-Yun Lee for fruitful discussion.The work is supported by the RFBR and DFG(project 19-57-12008)and the Minis-try of Science and Higher Education of the Russian Federation(0714-2020-0002). （project 19-57-12008）
