中南民族大学学报（自然科学版）2021，Vol.40Issue(2)：171-176,6.DOI:10.12130/znmdzk.20210210
透明导电ZTGO薄膜的制备及其光电性能研究
Fabrication and opto-electronic performance of transparent conducting ZTGO thin films
摘要
Abstract
The ZTGO transparent conductive oxide thin films were prepared by magnetron sputtering technique. The influences of growth temperature ( Tem ) on the optical, electrical and opto-electronic performance of the thin films were investigated by ultraviolet-visible spectrometer, four-point probe and optical characterization methods. The results show that the Tem significantly affects the electro-optical characteristics of thin films. When the Tem is at 640 K, the prepared thin film has the best opto-electronic performance, with the electrical conductivity of 7. 86 × 102 S?cm-1 , the optical band-gap of 3.48 eV, the minimum Urbach energy of 0.167 eV, the highest average visible transmittance of 84.61％ and the maximum figure of merit of 0.423 S.关键词
磁控溅射/透明导电氧化物/薄膜Key words
magnetron sputtering/transparent conductive oxide/thin film分类
信息技术与安全科学引用本文复制引用
钟志有,田雨,朱雅..透明导电ZTGO薄膜的制备及其光电性能研究[J].中南民族大学学报（自然科学版）,2021,40(2):171-176,6.基金项目
湖北省自然科学基金资助项目(2011CDB418) （2011CDB418）
