首页|期刊导航|半导体学报（英文版）|Recent progress of physical failure analysis of GaN HEMTs

Recent progress of physical failure analysis of GaN HEMTs

Xiaolong Cai Chenglin Du Zixuan Sun Ran Ye Haijun Liu Yu Zhang Xiangyang Duan Hai Lu

半导体学报（英文版）2021，Vol.42Issue(5)：37-48,12.

半导体学报（英文版）2021，Vol.42Issue(5)：37-48,12.DOI:10.1088/1674-4926/42/5/051801

Recent progress of physical failure analysis of GaN HEMTs

Xiaolong Cai ¹Chenglin Du ²Zixuan Sun ³Ran Ye ²Haijun Liu ³Yu Zhang ²Xiangyang Duan ³Hai Lu²

作者信息

1. School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 China
2. Architecture Team, Wireless Product Planning Department, ZTE Corporation, Nanjing 210012, China
3. State Key Laboratory of Mobile Network and Mobile Multimedia Technology, Shenzhen 518057, China
折叠

摘要

关键词

GaN/high electron mobility transistors/physical analysis/failure mechanism

Key words

GaN/high electron mobility transistors/physical analysis/failure mechanism

引用本文复制引用

Xiaolong Cai,Chenglin Du,Zixuan Sun,Ran Ye,Haijun Liu,Yu Zhang,Xiangyang Duan,Hai Lu..Recent progress of physical failure analysis of GaN HEMTs[J].半导体学报（英文版）,2021,42(5):37-48,12.

基金项目

This work is supported by the National Key R&D Program of China (No.2017YFB0403000). （No.2017YFB0403000）

半导体学报（英文版）

OACSCDCSTPCDEI

ISSN：1674-4926

访问量0

下载量0

段落导航