半导体学报（英文版）2021，Vol.42Issue(5)：49-52,4.DOI:10.1088/1674-4926/42/5/052001
A crossover from Efros-Shklovskii hopping to activated transport in a GaAs two-dimensional hole system at low temperatures
A crossover from Efros-Shklovskii hopping to activated transport in a GaAs two-dimensional hole system at low temperatures
S.Dlimi 1A.El kaaouachi 1L.Limouny 2B.A.Hammou1
作者信息
- 1. Physics Department, Faculty of Sciences, Ibn Zohr University, BP 8106, Hay Dakhla, 80000 Agadir, Morocco
- 2. Materials and Physicochemistry of the Atmosphere and Climate Group, Faculty of Sciences, Ibn Zohr University, BP 8106, 80000 Agadir,Morocco
- 折叠
摘要
关键词
quantum wells/2D GaAs heterostructues/transport properties/variable range hoppingKey words
quantum wells/2D GaAs heterostructues/transport properties/variable range hopping引用本文复制引用
S.Dlimi,A.El kaaouachi,L.Limouny,B.A.Hammou..A crossover from Efros-Shklovskii hopping to activated transport in a GaAs two-dimensional hole system at low temperatures[J].半导体学报（英文版）,2021,42(5):49-52,4.
