红外与毫米波学报2021，Vol.40Issue(2)：184-188,5.DOI:10.11972/j.issn.1001-9014.2021.02.008
用于太赫兹成像的CMOS肖特基二极管三维结构研究
Three-dimensional structure analysis of Schottky barrier diode in CMOS technology for terahertz imaging
摘要
Abstract
A simple and effective design method for high cut-off frequency Schottky barrier diode is proposed andimplemented. The cut-off frequency of the processed Schottky barrier diode is about 800 GHz,which can reach about 1 THz with the optimized parameters through the test results and simulation data in SMIC 180 nm process. The integrated detector including antennas,matching circuit and Schottky barrier diode is completed,whose test-ed responsivity could achieve 130 V/W and noise equivalent power is estimated to be 400 pW/ Hz at 220 GHz. The imaging experiment of invisible liquid surface in ceramic bottles has been completed and good results have been achieved.关键词
互补金属氧化物半导体/检波器/成像/肖特基二极管/太赫兹(THz)Key words
complementary metal oxide semiconductor(CMOS)/detector/imaging/Schottky barrier diode/terahertz分类
信息技术与安全科学引用本文复制引用
崔大圣,杨佳铭,姚宏璇,吕昕..用于太赫兹成像的CMOS肖特基二极管三维结构研究[J].红外与毫米波学报,2021,40(2):184-188,5.基金项目
Supported by National Natural Science Foundation of China(61527805) （61527805）
