半导体学报（英文版）2021，Vol.42Issue(6)：13-14,2.DOI:10.1088/1674-4926/42/6/060402
Efficient p-type doping in ultra-wide band-gap nitrides using non-equilibrium doping method
Efficient p-type doping in ultra-wide band-gap nitrides using non-equilibrium doping method
Jianbai Xia1
作者信息
- 1. State Key Laboratory of Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China
- 折叠
引用本文复制引用
Jianbai Xia..Efficient p-type doping in ultra-wide band-gap nitrides using non-equilibrium doping method[J].半导体学报（英文版）,2021,42(6):13-14,2.
