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A review of manufacturing technologies for silicon carbide superjunction devices

Run Tian Chao Ma Jingmin Wu Zhiyu Guo Xiang Yang Zhongchao Fan

半导体学报（英文版）2021，Vol.42Issue(6)：21-26,6.

半导体学报（英文版）2021，Vol.42Issue(6)：21-26,6.DOI:10.1088/1674-4926/42/6/061801

A review of manufacturing technologies for silicon carbide superjunction devices

Run Tian ¹Chao Ma ²Jingmin Wu ³Zhiyu Guo ¹Xiang Yang ²Zhongchao Fan¹

作者信息

1. Engineering Research Center for Semiconductor Integrated Technology,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China
2. College of Materials Science and Opto-Electronic Technology,University of Chinese Academy of Sciences,Beijing 100049,China
3. University of Electronic Science and Technology of China,Chengdu 610054,China
折叠

摘要

关键词

silicon carbide(SiC)/power semiconductor devices/superjunction(SJ)/process development

Key words

silicon carbide(SiC)/power semiconductor devices/superjunction(SJ)/process development

引用本文复制引用

Run Tian,Chao Ma,Jingmin Wu,Zhiyu Guo,Xiang Yang,Zhongchao Fan..A review of manufacturing technologies for silicon carbide superjunction devices[J].半导体学报（英文版）,2021,42(6):21-26,6.

基金项目

This work was supported by the National Key Research and Development Program(No.2016YFB0400500),and the Key Research and Development Projects in Guangdong Province(No.2019B010144001). （No.2016YFB0400500）

半导体学报（英文版）

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ISSN：1674-4926

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