A review of manufacturing technologies for silicon carbide superjunction devicesOACSCD
A review of manufacturing technologies for silicon carbide superjunction devices
Run Tian;Chao Ma;Jingmin Wu;Zhiyu Guo;Xiang Yang;Zhongchao Fan
Engineering Research Center for Semiconductor Integrated Technology,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,ChinaCollege of Materials Science and Opto-Electronic Technology,University of Chinese Academy of Sciences,Beijing 100049,ChinaUniversity of Electronic Science and Technology of China,Chengdu 610054,ChinaEngineering Research Center for Semiconductor Integrated Technology,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,ChinaCollege of Materials Science and Opto-Electronic Technology,University of Chinese Academy of Sciences,Beijing 100049,ChinaEngineering Research Center for Semiconductor Integrated Technology,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China
silicon carbide(SiC)power semiconductor devicessuperjunction(SJ)process development
silicon carbide(SiC)power semiconductor devicessuperjunction(SJ)process development
《半导体学报（英文版）》 2021 (6)
21-26,6
This work was supported by the National Key Research and Development Program(No.2016YFB0400500),and the Key Research and Development Projects in Guangdong Province(No.2019B010144001).
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