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Modeling the photon counting and photoelectron counting characteristics of quanta image sensors

Bowen Liu Jiangtao Xu

半导体学报(英文版)2021,Vol.42Issue(6):27-36,10.
半导体学报(英文版)2021,Vol.42Issue(6):27-36,10.DOI:10.1088/1674-4926/42/6/062301

Modeling the photon counting and photoelectron counting characteristics of quanta image sensors

Modeling the photon counting and photoelectron counting characteristics of quanta image sensors

Bowen Liu 1Jiangtao Xu1

作者信息

  • 1. Tianjin Key Laboratory of Imaging and Sensing Microelectronic Technology,School of Microelectronics,Tianjin University,Tianjin 300072,China
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摘要

关键词

CMOS image sensor/quanta image sensor/photon counting/photoelectron counting/signal error rate/integration time

Key words

CMOS image sensor/quanta image sensor/photon counting/photoelectron counting/signal error rate/integration time

引用本文复制引用

Bowen Liu,Jiangtao Xu..Modeling the photon counting and photoelectron counting characteristics of quanta image sensors[J].半导体学报(英文版),2021,42(6):27-36,10.

基金项目

This work was supported by the Tianjin Key Laboratory of Imaging and Sensing Microelectronic Technology. ()

半导体学报(英文版)

OACSCDCSTPCDEI

1674-4926

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