半导体学报（英文版）2021，Vol.42Issue(6)：37-42,6.DOI:10.1088/1674-4926/42/6/062302
Heavily doped silicon:A potential replacement of conventional plasmonic metals
Heavily doped silicon:A potential replacement of conventional plasmonic metals
Omar Faruque 1Rabiul Al Mahmud 1Rakibul Hasan Sagor1
作者信息
- 1. Islamic University of Technology(IUT),Board Bazar Gazipur,Gazipur 1704,Bangladesh
- 折叠
摘要
关键词
alternative plasmonic material/heavily doped p-silicon/surface plasmon polaritonsKey words
alternative plasmonic material/heavily doped p-silicon/surface plasmon polaritons引用本文复制引用
Omar Faruque,Rabiul Al Mahmud,Rakibul Hasan Sagor..Heavily doped silicon:A potential replacement of conventional plasmonic metals[J].半导体学报（英文版）,2021,42(6):37-42,6.
