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3.3 kV 4H-SiC DMOSFET with a source-contacted dummy gate for high-frequency applications

Kyuhyun Cha Kwangsoo Kim

半导体学报（英文版）2021，Vol.42Issue(6)：43-49,7.

半导体学报（英文版）2021，Vol.42Issue(6)：43-49,7.DOI:10.1088/1674-4926/42/6/062801

3.3 kV 4H-SiC DMOSFET with a source-contacted dummy gate for high-frequency applications

Kyuhyun Cha ¹Kwangsoo Kim¹

作者信息

1. Department of Electronic Engineering,Sogang University,Seoul 04107,Korea
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摘要

关键词

4H-SiC/MOSFET/dummy-gate/gate-drain charge/switching loss

Key words

4H-SiC/MOSFET/dummy-gate/gate-drain charge/switching loss

引用本文复制引用

Kyuhyun Cha,Kwangsoo Kim..3.3 kV 4H-SiC DMOSFET with a source-contacted dummy gate for high-frequency applications[J].半导体学报（英文版）,2021,42(6):43-49,7.

基金项目

This research was supported by the MSIT(Ministry of Sci-ence and ICT),Korea,under the ITRC(Information Techno-logy Research Center)support program(IITP-2020-2018-0-01421)supervised by the IITP(Institute for Information&Com-munications Technology Planning&Evaluation). （Ministry of Sci-ence and ICT）

半导体学报（英文版）

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ISSN：1674-4926

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