首页|期刊导航|半导体学报（英文版）|A 3.3 kV 4H-SiC split gate MOSFET with a central implant region for superior trade-off between static and switching performance
半导体学报（英文版）2021，Vol.42Issue(6)：59-67,9.DOI:10.1088/1674-4926/42/6/062803
A 3.3 kV 4H-SiC split gate MOSFET with a central implant region for superior trade-off between static and switching performance
A 3.3 kV 4H-SiC split gate MOSFET with a central implant region for superior trade-off between static and switching performance
摘要
关键词
4H-SiC/split gate/on-resistance/reverse transfer capacitance/switching energy loss/switching timeKey words
4H-SiC/split gate/on-resistance/reverse transfer capacitance/switching energy loss/switching time引用本文复制引用
Jongwoon Yoon,Kwangsoo Kim..A 3.3 kV 4H-SiC split gate MOSFET with a central implant region for superior trade-off between static and switching performance[J].半导体学报（英文版）,2021,42(6):59-67,9.基金项目
This research was supported by the MSIT(Ministry of Sci-ence and ICT),Korea,under the ITRC(Information Techno-logy Research Center)support program(IITP-2020-2018-0-01421)supervised by the IITP(Institute for Information&com-munications Technology Promotion),and then Samsung Elec-tronics. （Ministry of Sci-ence and ICT）
