红外与毫米波学报2021，Vol.40Issue(3)：285-289,5.DOI:10.11972/j.issn.1001-9014.2021.03.001
高量子效率中波InAs/GaSbⅡ类超晶格探测器分子束外延生长及特性
Molecular beam epitaxy growth and characteristics of the high quantum efficiency InAs/GaSb type-Ⅱ superlattices MWIR detector
摘要
Abstract
A very high quantum efficiency InAs/GaSb T2SL mid-wavelength infrared(MWIR)photodetector hasbeen grown by molecular beam epitaxy(MBE). The T2SL detector structure material exhibited smooth surface with step-flow growth and excellent structural homogeneity. The 50％cut-off wavelength was about 5. 5μm. The peak current responsivity was 2. 6 A/W corresponding to a quantum efficiency over 80％at 77 K,which was com?parable to that of MCT. At 77 K,the dark current density at-50 mV bias was 1. 8×10-6 A/cm2 and the resistance-area product(RA)at maximum(-50 mV bias)was 3. 8×105 Ω·cm2. The peak detectivity was calculated to be 6. 1 × 1012 cm Hz1/2/W.关键词
分子束外延/高量子效率/中波红外Key words
molecular beam epitaxy/high quantum efficiency/mid-wavelength infrared分类
信息技术与安全科学引用本文复制引用
陈凯豪,徐志成,梁钊铭,朱艺红,陈建新,何力..高量子效率中波InAs/GaSbⅡ类超晶格探测器分子束外延生长及特性[J].红外与毫米波学报,2021,40(3):285-289,5.基金项目
Supported by the National Natural Science Foundation of China(NSFC)(61904183,61974152,61534006,61505237,61505235),the National Key Research and Development Program of China(2016YFB0402403),the Youth Innovation Promotion Association,CAS(2016219),and the Fund of Shanghai Science and Technology Foundation(16JC1400403). （NSFC）
