红外与毫米波学报2021，Vol.40Issue(3)：329-333,5.DOI:10.11972/j.issn.1001-9014.2021.03.008
免镇流电阻的非均匀发射极指间距设计对多指功率双极晶体管射频功率性能的改善
RF power performance improvement of multi-finger power bipolar transistor by non-uniform emitter finger spacing design without the use of emitter ballasting resistor
摘要
Abstract
In this paper,the RF power performance and surface temperature distributions for a multi-finger power hetero-junction bipolar transistor(HBT)with non-uniform emitter finger spacing(NUEFS)without the use of emitter-ballasting-resistor(EBR)are measured,and are compared with a multi-finger power HBT with EBR. The experiment results show that for the multi-finger power HBT with NUEFS,the highest surface temperature is lowered,the uniformity of surface temperature distributions measured by US QFI Infrared TMS is improved,the RF power gain and power-added-efficiency(PAE)are increased compared with the multi-finger power HBT with EBR respectively. These results could be attributed to the improvement in positive thermoelectric feedback and thermal coupling effects among the fingers,and the riddance of adverse impact from emitter-ballasting-resistor used in traditional power HBT.关键词
双极晶体管/射频/热稳定性/功率增益/功率附加效率/多指Key words
bipolar transistor/radio frequency (RF)/thermal stability/power gain/power-added-efficiency (PAE)/multi-finger分类
信息技术与安全科学引用本文复制引用
张正,张延华,金冬月,那伟聪,谢红云..免镇流电阻的非均匀发射极指间距设计对多指功率双极晶体管射频功率性能的改善[J].红外与毫米波学报,2021,40(3):329-333,5.基金项目
Supported by National Natural Science Foundation of China(61774012,61574010) （61774012,61574010）
