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Strain-Modulated Photoelectric Responses from a Flexible α-In2Se3/3R MoS2 Heterojunction

Weifan Cai Jingyuan Wang Yongmin He Sheng Liu Qihua Xiong Zheng Liu Qing Zhang

纳微快报（英文）2021，Vol.13Issue(7)：1-11,11.

Strain-Modulated Photoelectric Responses from a Flexible α-In2Se3/3R MoS2 Heterojunction

Weifan Cai ¹Jingyuan Wang ¹Yongmin He ²Sheng Liu ³Qihua Xiong ³Zheng Liu ²Qing Zhang¹

作者信息

1. Center for Micro-and Nano-Electronics,School of Electrical and Electronic Engineering,Nanyang Technological University,Singapore 639798,Singapore
2. School of Materials Science and Engineering,Nanyang Technological University,Singapore 639798,Singapore
3. Division of Physics and Applied Physics,School of Physical and Mathematical Sciences,Nanyang Technological University,Singapore 639798,Singapore
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摘要

关键词

α-In2Se3/3R MoS2 heterojunction/Flexible/Self-powered photodetector/Strain modulation/Piezoelectric charge

Key words

α-In2Se3/3R MoS2 heterojunction/Flexible/Self-powered photodetector/Strain modulation/Piezoelectric charge

引用本文复制引用

Weifan Cai,Jingyuan Wang,Yongmin He,Sheng Liu,Qihua Xiong,Zheng Liu,Qing Zhang..Strain-Modulated Photoelectric Responses from a Flexible α-In2Se3/3R MoS2 Heterojunction[J].纳微快报（英文）,2021,13(7):1-11,11.

基金项目

This project is financially supported by MOE AcRF Tier2(2018-T2-2-005),MOE AcRF Tier1(2018-T1-005-001)and A*STAR AME IRG Grant SERC A1983c0027,Singapore. （2018-T2-2-005）

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ISSN：2311-6706

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