首页|期刊导航|半导体学报（英文版）|A 15 Gbps-NRZ,30 Gbps-PAM4,120 mA laser diode driver implemented in 0.15-an GaAs E-mode pHEMT technology
半导体学报（英文版）2021，Vol.42Issue(7)：47-59,13.DOI:10.1088/1674-4926/42/7/072401
A 15 Gbps-NRZ,30 Gbps-PAM4,120 mA laser diode driver implemented in 0.15-an GaAs E-mode pHEMT technology
A 15 Gbps-NRZ,30 Gbps-PAM4,120 mA laser diode driver implemented in 0.15-an GaAs E-mode pHEMT technology
摘要
关键词
high current drivers/impedance matching/laser diode driver/optical transmitter/NRZ/PAM4/pHEMT technologyKey words
high current drivers/impedance matching/laser diode driver/optical transmitter/NRZ/PAM4/pHEMT technology引用本文复制引用
Ahmed Wahba,Lin Cheng,Fujiang Lin..A 15 Gbps-NRZ,30 Gbps-PAM4,120 mA laser diode driver implemented in 0.15-an GaAs E-mode pHEMT technology[J].半导体学报（英文版）,2021,42(7):47-59,13.基金项目
The authors would like to acknowledge the support of the Chinese Academy of Science and The World Academy of Science (CAS-TWAS).In addition,they would like to thank the Information Science Laboratory Center of the University of Sci-ence and Technology of China for EDA tools.The work is par-tially carried out at the USTC Center for Micro and Nanoscale Research and Fabrication. （CAS-TWAS）
