Applications of 2D-Layered Palladium Diselenide and Its van der Waals Heterostructures in Electronics and Optoelectronics
Yanhao Wang Haiyun Liu Hong Liu Weijia Zhou Xiao Wang Mark H.Rummeli Yu Zhang Gianaurelio Cuniberti Jinbo Pang Qilin Cheng Lin Han Yufen Li Xue Meng Bergoi Ibarlucea Hongbin Zhao Feng Yang
Applications of 2D-Layered Palladium Diselenide and Its van der Waals Heterostructures in Electronics and Optoelectronics
Applications of 2D-Layered Palladium Diselenide and Its van der Waals Heterostructures in Electronics and Optoelectronics
摘要
关键词
Palladium diselenide/nTMDC/Synthesis/Field-effect transistors/Photodetectors/SensorsKey words
Palladium diselenide/nTMDC/Synthesis/Field-effect transistors/Photodetectors/Sensors引用本文复制引用
Yanhao Wang,Haiyun Liu,Hong Liu,Weijia Zhou,Xiao Wang,Mark H.Rummeli,Yu Zhang,Gianaurelio Cuniberti,Jinbo Pang,Qilin Cheng,Lin Han,Yufen Li,Xue Meng,Bergoi Ibarlucea,Hongbin Zhao,Feng Yang..Applications of 2D-Layered Palladium Diselenide and Its van der Waals Heterostructures in Electronics and Optoelectronics[J].纳微快报(英文),2021,13(9):422-473,52.基金项目
H.L. acknowledges the National Key Research and Development Program of China (2017YFB0405400)from the Ministry of Science and Technology (MOST) of China,and the Natural Science Foundation for Distinguished Young Sci-entist of Shandong Province (Grant No.JQ201814).We thank the Project of "20 items of University" of Jinan (2018GXRC031).W.Z thanks Taishan Scholars Project Special Funds (tsqn201812083)and NSFC (No.52022037).The authors show their gratitude to the National Natural Science Foundation of China (NSFC grant No.51802113,51802116) and the Natural Science Founda-tion of Shandong Province,China (grant No.ZR2019BEM040,ZR2018BEM015).M.H.R. thanks the National Science Foundation China (NSFC,Project 52071225),the National Science Center and the Czech Republic under the ERDF program "Institute of Envi-ronmental Technology—Excellent Research" (No.CZ.02.1.01/0.0/0.0/16_019/0000853) and the Sino-German Research Institute for support (Project No.GZ 1400). (2017YFB0405400)