首页|期刊导航|半导体学报（英文版）|Low-cost dual-stage offset-cancelled sense amplifier with hybrid read reference generator for improved read performance of RRAM at advanced technology nodes
半导体学报（英文版）2021，Vol.42Issue(8)：63-68,6.DOI:10.1088/1674-4926/42/8/082401
Low-cost dual-stage offset-cancelled sense amplifier with hybrid read reference generator for improved read performance of RRAM at advanced technology nodes
Low-cost dual-stage offset-cancelled sense amplifier with hybrid read reference generator for improved read performance of RRAM at advanced technology nodes
摘要
关键词
RRAM/double sensing margin/device mismatch cancellation/nonlinearity of RRAM resistance/hybrid reference-cellKey words
RRAM/double sensing margin/device mismatch cancellation/nonlinearity of RRAM resistance/hybrid reference-cell引用本文复制引用
Qiao Wang,Donglin Zhang,Yulin Zhao,Chao Liu,Xiaoxin Xu,Jianguo Yang,Hangbing Lv..Low-cost dual-stage offset-cancelled sense amplifier with hybrid read reference generator for improved read performance of RRAM at advanced technology nodes[J].半导体学报（英文版）,2021,42(8):63-68,6.基金项目
This work was supported in part by the National Key R&D Program of China under Grant No.2019YFB2204800 and in part by the Major Scientific Research Project of Zhejiang Lab(Grant No.2019KCOAD02)and in part by the National Natur-al Science Foundation of China under Grants 61904200 and the Strategic Priority Research Program of the Chinese Academy of Sciences under Grant No.XDB44000000. （Grant No.2019KCOAD02）
