首页|期刊导航|半导体学报（英文版）|First-principles study of the growth and diffusion of B and N atoms on the sapphire surface with h-BN as the buffer layer
半导体学报（英文版）2021，Vol.42Issue(8)：69-75,7.DOI:10.1088/1674-4926/42/8/082801
First-principles study of the growth and diffusion of B and N atoms on the sapphire surface with h-BN as the buffer layer
First-principles study of the growth and diffusion of B and N atoms on the sapphire surface with h-BN as the buffer layer
摘要
关键词
hexagonal boron nitride/buffer layer/first-principles calculations/molecular dynamicsKey words
hexagonal boron nitride/buffer layer/first-principles calculations/molecular dynamics引用本文复制引用
Jianyun Zhao,Xu Li,Ting Liu,Yong Lu,Jicai Zhang..First-principles study of the growth and diffusion of B and N atoms on the sapphire surface with h-BN as the buffer layer[J].半导体学报（英文版）,2021,42(8):69-75,7.基金项目
This work was partly supported by the National Natural Sci-ence Foundation of China(61874007,12074028),the Beijing Municipal Natural Science Foundation(4182046),Shandong Provincial Major Scientific and Technological Innovation Project(2019JZZY010209),Key-area research and the develop-ment program of Guangdong Province(2020B010172001),and the Fundamental Research Funds for the Central Universit-ies(buctrc201802,buctrc201830,buctrc202127). （61874007,12074028）
