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The scanning tunneling microscopy and spectroscopy of GaSb1-xBix films of a few-nanometer thickness grown by molecular beam epitaxy

Fangxing Zha Qiuying Zhang Haoguang Dai Xiaolei Zhang Li Yue Shumin Wang Jun Shao

半导体学报（英文版）2021，Vol.42Issue(9)：31-35,5.

半导体学报（英文版）2021，Vol.42Issue(9)：31-35,5.DOI:10.1088/1674-4926/42/9/092101

The scanning tunneling microscopy and spectroscopy of GaSb1-xBix films of a few-nanometer thickness grown by molecular beam epitaxy

Fangxing Zha ¹Qiuying Zhang ¹Haoguang Dai ¹Xiaolei Zhang ²Li Yue ³Shumin Wang ²Jun Shao⁴

作者信息

1. Physics Department,Shanghai University,Shanghai 200444,China
2. Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China
3. School of Information Science and Technology,Shanghai Tech University,Shanghai 201210,China
4. Department of Microtechnology and Nanoscience,Chalmers University of Technology,41296 Gothenburg,Sweden
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摘要

关键词

scanning tunneling microscopy/molecular beam epitaxy/semiconductor surface

Key words

scanning tunneling microscopy/molecular beam epitaxy/semiconductor surface

引用本文复制引用

Fangxing Zha,Qiuying Zhang,Haoguang Dai,Xiaolei Zhang,Li Yue,Shumin Wang,Jun Shao..The scanning tunneling microscopy and spectroscopy of GaSb1-xBix films of a few-nanometer thickness grown by molecular beam epitaxy[J].半导体学报（英文版）,2021,42(9):31-35,5.

基金项目

This work was supported by the National Natural Science Foundation of China (Nos.61474073,61874069 and 61804157). （Nos.61474073,61874069 and 61804157）

半导体学报（英文版）

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ISSN：1674-4926

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