首页|期刊导航|半导体学报(英文版)|The scanning tunneling microscopy and spectroscopy of GaSb1-xBix films of a few-nanometer thickness grown by molecular beam epitaxy

The scanning tunneling microscopy and spectroscopy of GaSb1-xBix films of a few-nanometer thickness grown by molecular beam epitaxyOACSCD

The scanning tunneling microscopy and spectroscopy of GaSb1-xBix films of a few-nanometer thickness grown by molecular beam epitaxy

Fangxing Zha;Qiuying Zhang;Haoguang Dai;Xiaolei Zhang;Li Yue;Shumin Wang;Jun Shao

Physics Department,Shanghai University,Shanghai 200444,ChinaPhysics Department,Shanghai University,Shanghai 200444,ChinaPhysics Department,Shanghai University,Shanghai 200444,ChinaShanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,ChinaSchool of Information Science and Technology,Shanghai Tech University,Shanghai 201210,ChinaShanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,ChinaDepartment of Microtechnology and Nanoscience,Chalmers University of Technology,41296 Gothenburg,Sweden

scanning tunneling microscopymolecular beam epitaxysemiconductor surface

scanning tunneling microscopymolecular beam epitaxysemiconductor surface

《半导体学报(英文版)》 2021 (9)

31-35,5

This work was supported by the National Natural Science Foundation of China (Nos.61474073,61874069 and 61804157).

10.1088/1674-4926/42/9/092101

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