Low-thermal-budget Au-free ohmic contact to an ultrathin barrier AlGaN/GaN heterostructure utilizing a micro-patterned ohmic recess
Wen Shi Haibo Yin Ke Wei Yankui Li Jingyuan Shi Haojie Jiang Junfeng Li Xinyu Liu Sen Huang Xinhua Wang Qimeng Jiang Yixu Yao Lan Bi Yuchen Li Kexin Deng Jie Fan
Low-thermal-budget Au-free ohmic contact to an ultrathin barrier AlGaN/GaN heterostructure utilizing a micro-patterned ohmic recess
Low-thermal-budget Au-free ohmic contact to an ultrathin barrier AlGaN/GaN heterostructure utilizing a micro-patterned ohmic recess
摘要
关键词
ultrathin-barrier AlGaN/GaN heterostructure/low thermal budget/Au-free ohmic contact/micro-patterned ohmic re-cess/MIS-HEMTs/transfer lengthKey words
ultrathin-barrier AlGaN/GaN heterostructure/low thermal budget/Au-free ohmic contact/micro-patterned ohmic re-cess/MIS-HEMTs/transfer length引用本文复制引用
Wen Shi,Haibo Yin,Ke Wei,Yankui Li,Jingyuan Shi,Haojie Jiang,Junfeng Li,Xinyu Liu,Sen Huang,Xinhua Wang,Qimeng Jiang,Yixu Yao,Lan Bi,Yuchen Li,Kexin Deng,Jie Fan..Low-thermal-budget Au-free ohmic contact to an ultrathin barrier AlGaN/GaN heterostructure utilizing a micro-patterned ohmic recess[J].半导体学报（英文版）,2021,42(9):51-55,5.基金项目
This work was supported by National Natural Science Foundation of China under Grant 61822407,Grant 62074161,and Grant 11634002 （）
in part by the Key Research Program of Frontier Sciences,Chinese Academy of Sciences (CAS) under Grant QYZDB-SSW-JSC012 （CAS）
in part by the National Key Re-search and Development Program of China under Grant 2016YFB0400105 and Grant 2017YFB0403000 （）
in part by the Youth Innovation Promotion Association of CAS （）
in part by the University of Chinese Academy of Sciences （）
and in part by the Opening Project of Key Laboratory of Microelectronic Devices & Integrated Technology,Institute of Microelectron-ics,CAS. （）
