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Effect of the post-gate annealing on the gate reliability of AlGaN/GaN HEMTs

Changxi Chen Quan Wang Wei Li Qian Wang Chun Feng Lijuan Jiang Hongling Xiao Xiaoliang Wang

半导体学报（英文版）2021，Vol.42Issue(9)：57-62,6.

半导体学报（英文版）2021，Vol.42Issue(9)：57-62,6.DOI:10.1088/1674-4926/42/9/092802

Effect of the post-gate annealing on the gate reliability of AlGaN/GaN HEMTs

Changxi Chen ¹Quan Wang ²Wei Li ¹Qian Wang ³Chun Feng ¹Lijuan Jiang ¹Hongling Xiao ¹Xiaoliang Wang²

作者信息

1. Key Lab of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China
2. Center of Materials Science and Optoelectronics Engineering and School of Microelectronics,University of Chinese Academy of Sciences,Beijing 100049,China
3. State Key Laboratory of Crystal Materials,Shandong University,Jinan 250100,China
折叠

摘要

关键词

AlGaN/GaN HEMTs/gate leakage/PF emission/post-gate annealing (PGA)

Key words

AlGaN/GaN HEMTs/gate leakage/PF emission/post-gate annealing (PGA)

引用本文复制引用

Changxi Chen,Quan Wang,Wei Li,Qian Wang,Chun Feng,Lijuan Jiang,Hongling Xiao,Xiaoliang Wang..Effect of the post-gate annealing on the gate reliability of AlGaN/GaN HEMTs[J].半导体学报（英文版）,2021,42(9):57-62,6.

基金项目

This work was supported by the National Key Research and Development Program of China (2017YFB0402900) and the National Natural Sciences Foundation of China(62074144). （2017YFB0402900）

半导体学报（英文版）

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ISSN：1674-4926

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