首页|期刊导航|纳微快报(英文)|Fully Printed High-Performance n-Type Metal Oxide Thin-Film Transistors Utilizing Coffee-Ring Effect

Fully Printed High-Performance n-Type Metal Oxide Thin-Film Transistors Utilizing Coffee-Ring EffectOACSCD

Fully Printed High?Performance n?Type Metal Oxide Thin?Film Transistors Utilizing Coffee?Ring Effect

英文摘要

Metal oxide thin-films transistors (TFTs) pro duced from solution-based printing techniques can lead to large-area electronics with low cost. However, the performance of current printed devices is inferior to those from vacuum-based methods due to poor film uniformity induced by the "coffeering" effect. Here, we report a novel approach to print highperformance indium tin oxide (ITO)-based TFTs and logic inverters by taking advantage of such notorious effect.…查看全部>>

Kun Liang;Siyuan Zhu;Pei Sheng;Wenbin Li;Xiao Lin;Bowen Zhu;Dingwei Li;Huihui Ren;Momo Zhao;Hong Wang;Mengfan Ding;Guangwei Xu;Xiaolong Zhao;Shibing Long

Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province,School of Engineering,Westlake University,Hangzhou 310024,ChinaZhejiang University,Hangzhou 310027,ChinaInstrumentation and Service Center for Physical Sciences,Westlake University,Hangzhou 310024,ChinaInstrumentation and Service Center for Physical Sciences,Westlake University,Hangzhou 310024,ChinaKey Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province,School of Engineering,Westlake University,Hangzhou 310024,ChinaInstitute of Advanced Technology,Westlake Institute for Advanced Study,Hangzhou 310024,ChinaSchool of Science,Westlake University,Hangzhou 310024,ChinaKey Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province,School of Engineering,Westlake University,Hangzhou 310024,ChinaInstitute of Advanced Technology,Westlake Institute for Advanced Study,Hangzhou 310024,ChinaKey Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province,School of Engineering,Westlake University,Hangzhou 310024,ChinaZhejiang University,Hangzhou 310027,ChinaKey Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province,School of Engineering,Westlake University,Hangzhou 310024,ChinaZhejiang University,Hangzhou 310027,ChinaKey Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province,School of Engineering,Westlake University,Hangzhou 310024,China

Printed electronicsIndium tin oxideThin-film transistorsCoffee-ring effectNMOS inverters

Printed electronicsIndium tin oxideThin-film transistorsCoffee-ring effectNMOS inverters

《纳微快报(英文)》 2021 (11)

68-78,11

This research was financially supported&nbspunder the Westlake Multidisciplinary Research Initiative Center&nbsp(MRIC)Seed Fund(Grant No.MRIC20200101).This work was&nbspperformed in part at the Westlake Center for Micro/Nano Fabrica-tion and the Instrumentation and Service Center for Physical Sci-ences(ISCPS),Westlake University.B.Z.thanks Prof.Yang Yang,&nbspUCLA,for discussion and suggestions.The authors acknowledge&nbspDr.Taofei Zhou,Dr.Xiaohe Miao,and Dr.Lin Liu of ISCPS,and&nbspMr.Danyang Zhu of Westlake University for technical assistance.

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