红外与毫米波学报2021，Vol.40Issue(5)：595-604,10.DOI:10.11972/j.issn.1001-9014.2021.05.005
利用分子束外延生长高质量应变平衡InAs/InAsSbⅡ类超晶格
High quality strain-balanced InAs/InAsSb type-Ⅱ superlattices grown by molecular beam epitaxy
摘要
Abstract
In this paper,high quality InAs/InAsSb(Ga-free)type-Ⅱ superlattice were grown on GaSb substratesby molecular beam epitaxy. The superlattice layers structure consists of 100 periods with 3. 8 nm thick InAs lay-ers and 1. 4 nm InAs0. 66Sb0. 34 layers. A specific spike-like defect was found during experiment. The epitaxial layer was characterized and analyzed by high-resolution x-ray diffraction(HRXRD),atomic force microscope(AFM) and Fourier transform infrared spectroscopy(FTIR). The results show that the optimized sample is almost zero lattice mismatched,the FWHM of the zeroth order SL peak is 39. 3 arcsec,the RMS surface roughness achieves around 1. 72? over an area of 10μm×10μm. The FTIR absorption spectrum shows a 50％cutoff wavelength of 4. 28μm. And PL spectrum shows that the peak of InAs/InAs0. 66Sb0. 34 SL is at 4. 58μm. These initial results indi-cate that the grown InAs/InAsSb SL is stable and reproducible,and thus it is worthy of further investigation.关键词
InAs/InAsSb/超晶格/分子束外延/Ⅲ-Ⅴ族半导体材料Key words
InAs/InAsSb/superlattice/MBE/Ⅲ-V semiconductor materials分类
信息技术与安全科学引用本文复制引用
魏国帅,徐应强,牛智川,王耀,郝瑞亭,郭杰,马晓乐,李晓明,李勇,常发冉,庄玉,王国伟..利用分子束外延生长高质量应变平衡InAs/InAsSbⅡ类超晶格[J].红外与毫米波学报,2021,40(5):595-604,10.基金项目
Supported by the National Natural Science Foundation of China(61774130,11474248,61790581,51973070),and the Ph.D.Pro?grams Foundation of Ministry of Education of China(20105303120002),National Key Technology Research and Development Program of the Ministry of Sci?ence and Technology of China(2018YFA0209101). （61774130,11474248,61790581,51973070）
