发光学报2021，Vol.42Issue(7)：897-903,7.DOI:10.37188/CJL.20210102
俄歇复合、电子泄漏和空穴注入对深紫外发光二极管效率衰退的影响
Impact of Auger Recombination,Electron Leakage and Hole Injection on Efficiency Droop for DUV LEDs
摘要
Abstract
We reveal the impact of the Auger recombination,electron leakage and hole injection on the efficiency droop for deep-ultraviolet light-emitting diodes(DUV LEDs).According to our results,the minor change of the efficiency droop is caused by the Auger recombination when the Auger recombination coefficients range from 10-32 cm6 · s-1 to 10-30 cm6 ·s-1.The Auger recombination induces notable role on the efficiency droop by defining the Auger recombination coefficient of 10-29 cm6 · s-1.However,the large Auger recombination coefficient is not realistic for AlGaN materials.Besides,we find that the efficiency droop becomes significant with the increased electron leakage,even when the adopted Auger recom-bination coefficient is as small as 10-32 cm6 · s-1.Thus,we can prove electron leakage is a major factor causing the severe efficiency droop for DUV LEDs.We then prove that increasing hole injection can suppress efficiency droop because more electrons can recombine with holes instead of escaping from multiple quantum wells(MQWs).关键词
深紫外发光二极管/俄歇复合/电子泄漏/空穴注入/效率衰退Key words
DUV LED/Auger recombination/electron leakage/hole injection/efficiency droop分类
信息技术与安全科学引用本文复制引用
王玮东,楚春双,张丹扬,毕文刚,张勇辉,张紫辉..俄歇复合、电子泄漏和空穴注入对深紫外发光二极管效率衰退的影响[J].发光学报,2021,42(7):897-903,7.基金项目
国家自然科学基金(62074050,61975051) （62074050,61975051）
河北工业大学省部共建电工装备可靠性与智能化国家重点实验室研究项目(EERI_PI2020008) （EERI_PI2020008）
东旭集团与河北工业大学联合研究项目(HI1909)资助Supported by National Natural Science Foundation of China(62074050,61975051) （HI1909）
State Key Laboratory of Reliability and Intel-ligence of Electrical Equipment,Hebei University of Technology(EERI_PI2020008) （EERI_PI2020008）
The Joint Research Project for Tungsu Group and Hebei University of Technology(HI1909) （HI1909）
