|国家科技期刊平台
| 注册
首页|期刊导航|半导体学报（英文版）|Radiation-hardened property of single-walled carbon nanotube film-based field-effect transistors under low-energy proton irradiation

Radiation-hardened property of single-walled carbon nanotube film-based field-effect transistors under low-energy proton irradiation

Xiaorui Zhang Yao Yao Dayong Zhang Jingyuan Shi Lei Wang Bo Li Zhi Jin Huiping Zhu Song'ang Peng Guodong Xiong Chaoyi Zhu Xinnan Huang Shurui Cao Junjun Zhang Yunpeng Yan

半导体学报（英文版）2021，Vol.42Issue(11)：21-28,8.
✕
半导体学报（英文版）2021，Vol.42Issue(11)：21-28,8.DOI:10.1088/1674-4926/42/11/112002

Radiation-hardened property of single-walled carbon nanotube film-based field-effect transistors under low-energy proton irradiation

Radiation-hardened property of single-walled carbon nanotube film-based field-effect transistors under low-energy proton irradiation

Xiaorui Zhang 1Yao Yao 2Dayong Zhang 1Jingyuan Shi 3Lei Wang 1Bo Li 1Zhi Jin 4Huiping Zhu 4Song'ang Peng 1Guodong Xiong 4Chaoyi Zhu 1Xinnan Huang 4Shurui Cao 4Junjun Zhang 2Yunpeng Yan1

作者信息

  • 1. High-Frequency High-Voltage Device and Integrated Circuits R&D Center,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China
  • 2. University of Chinese Academy of Sciences,Beijing 100049,China
  • 3. Department of Chemistry,City University of Hong Kong,Hong Kong 999077,China
  • 4. Key Laboratory of Science and Technology on Silicon Devices,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China
  • 折叠

摘要

关键词

SWCNT FETs/low-energy proton irradiation/radiation effects/electrical performance/TID effect/displacement dam-age effect/simulation

Key words

SWCNT FETs/low-energy proton irradiation/radiation effects/electrical performance/TID effect/displacement dam-age effect/simulation

引用本文复制引用

Xiaorui Zhang,Yao Yao,Dayong Zhang,Jingyuan Shi,Lei Wang,Bo Li,Zhi Jin,Huiping Zhu,Song'ang Peng,Guodong Xiong,Chaoyi Zhu,Xinnan Huang,Shurui Cao,Junjun Zhang,Yunpeng Yan..Radiation-hardened property of single-walled carbon nanotube film-based field-effect transistors under low-energy proton irradiation[J].半导体学报（英文版）,2021,42(11):21-28,8.

基金项目

This work was financially supported by the National Natur-al Science Foundation of China(No.61704189),the Common Information System Equipment Pre-Research Special Techno-logy Project(31513020404-2),Youth Innovation Promotion As-sociation of Chinese Academy of Sciences and the Opening Project of Key Laboratory of Microelectronic Devices & Integ-rated Technology,and the Key Research Program of Frontier Sciences,CAS(Grant ZDBS-LY-JSC015) （No.61704189）

半导体学报（英文版）

OACSCDCSTPCDEI

1674-4926

访问量0
|
下载量0
段落导航相关论文