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Direct calculations on the band offsets of large-lattice-mismatched and heterovalent Si and Ⅲ-Ⅴ semiconductors

Yuying Hu Chen Qiu Tao Shen Kaike Yang Huixiong Deng

半导体学报（英文版）2021，Vol.42Issue(11)：35-41,7.

半导体学报（英文版）2021，Vol.42Issue(11)：35-41,7.DOI:10.1088/1674-4926/42/11/112102

Direct calculations on the band offsets of large-lattice-mismatched and heterovalent Si and Ⅲ-Ⅴ semiconductors

Yuying Hu ¹Chen Qiu ²Tao Shen ¹Kaike Yang ¹Huixiong Deng²

作者信息

1. State Key Laboratory of Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China
2. College of Materials Science and Opto-Electronic Technology,University of Chinese Academy of Sciences,Beijing 100049,China
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摘要

关键词

Si-based luminescence/band offset/lattice mismatch/heterovalent semiconductors

Key words

Si-based luminescence/band offset/lattice mismatch/heterovalent semiconductors

引用本文复制引用

Yuying Hu,Chen Qiu,Tao Shen,Kaike Yang,Huixiong Deng..Direct calculations on the band offsets of large-lattice-mismatched and heterovalent Si and Ⅲ-Ⅴ semiconductors[J].半导体学报（英文版）,2021,42(11):35-41,7.

基金项目

This work was supported by the National Key Research and Development Program of China(Grant No.2018YFB2200100),the Key Research Program of the Chinese Academy of Sciences(Grant No.XDPB22),and the National Nat-ural Science Foundation of China(Grant No.118764347,11614003,11804333).H.X.D.was also supported by the Youth Innovation Promotion Association of Chinese Academy of Sciences(Grant No.2017154). （Grant No.2018YFB2200100）

半导体学报（英文版）

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ISSN：1674-4926

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