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Investigation of lateral spreading current in the 4H-SiC Schottky barrier diode chip

Xi Wang Yiwen Zhong Hongbin Pu Jichao Hu Xianfeng Feng Guowen Yang

半导体学报（英文版）2021，Vol.42Issue(11)：75-80,6.

半导体学报（英文版）2021，Vol.42Issue(11)：75-80,6.DOI:10.1088/1674-4926/42/11/112802

Investigation of lateral spreading current in the 4H-SiC Schottky barrier diode chip

Xi Wang ¹Yiwen Zhong ²Hongbin Pu ¹Jichao Hu ¹Xianfeng Feng ²Guowen Yang¹

作者信息

1. Department of Electronic Engineering,Xi'an University of Technology,Xi'an 710048,China
2. Xi'an Key Laboratory of power Electronic Devices and High Efficiency Power Conversion,Xi'an 710048,China
折叠

摘要

关键词

4H-SiC/Schottky barrier diode/lateral spreading current

Key words

4H-SiC/Schottky barrier diode/lateral spreading current

引用本文复制引用

Xi Wang,Yiwen Zhong,Hongbin Pu,Jichao Hu,Xianfeng Feng,Guowen Yang..Investigation of lateral spreading current in the 4H-SiC Schottky barrier diode chip[J].半导体学报（英文版）,2021,42(11):75-80,6.

基金项目

This work was supported in part by National Natural Sci-ence Foundation of China(62004161),in part by Natural Sci-ence Basic Research Plan in Shaanxi Province of China(2020JQ-636),in part by Scientific Research Project of Educa-tion Department of Shaanxi Province(20JK0796),in part by Youth talent lift project of Xi'an Science and Technology Asso-ciation(095920201318)and in part by Bidding Project of Shanxi Province(20201101017). （62004161）

半导体学报（英文版）

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ISSN：1674-4926

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