发光学报2021，Vol.42Issue(11)：1739-1747,9.DOI:10.37188/CJL.20210287
温度对氮化铝表面形貌的调控及演化机理
Temperature Dependence and Evolution Mechanism of Aluminum Nitride Morphologies
摘要
Abstract
Aluminum nitride( AlN) is a significant ultra-wide bandgap semiconductor material. This paper studies the surface morphology evolution and growth mechanism of AlN grown on sapphire substrates by hydride vapor phase epitaxy( HVPE) . The morphologies of AlN are controlled by the nitridation pre-treatment and the growth temperature from 750 ℃ to 1100 ℃. The results show that growth temperature played a critical role in the AlN growth of mor-phology and growth mode. The difference in nanoscale or microscale morphologies of AlN is attributed to the surface migration of Al adatoms dominated by the growth temperature and the evolution of the dislocation. Moreover, the sur-face morphology evolution leads to an inverted pyramid morphology or large V-shaped pits at the growth temperature of 900 ℃. The grown V-shaped pits have {10-11} semi-polar facets and follow the three-dimensional(3D) growth mode. The semi-polar facets AlN structure could be used for realizing facet-controlled epitaxial of semi-polar UV-LED or other Ⅲ-nitride growth, which has prospects in optoelectronic and electronic devices.关键词
超宽禁带半导体材料/氮化铝/氢化物气相外延/生长温度/表面形貌Key words
ultra-wide bandgap semiconductor/aluminum nitride/hydride vapor phase epitaxy/growth tempera-ture/surface morphology分类
数理科学引用本文复制引用
牛慧丹,王占国,孔苏苏,杨少延,刘祥林,魏鸿源,姚威振,李辉杰,陈庆庆,汪连山..温度对氮化铝表面形貌的调控及演化机理[J].发光学报,2021,42(11):1739-1747,9.基金项目
国家重点研发计划(2017YFB0404201) （2017YFB0404201）
国家自然科学基金(61774147,61874108)资助项目 （61774147,61874108）
