南京航空航天大学学报（英文版）2021，Vol.38Issue(5)：758-768,11.
基于增强型GaN HEMT的改进型桥臂串扰抑制方法研究
An Improved Active Miller Clamp Crosstalk Suppression Method for Enhancement?Mode GaN HEMTs in Phase?Leg Configuration
摘要
Abstract
When using traditional drive circuits,the enhancement-mode GaN(eGaN)HEMT will be affected by high switching speed characteristics and parasitic parameters leading to worse crosstalk problems. Currently,the existing crosstalk suppression drive circuits often have the disadvantages of increased switching loss,control complexity,and overall electromagnetic interference(EMI). Therefore,this paper combines the driving loop impedance control and the active Miller clamp method to propose an improved active Miller clamp drive circuit. First,the crosstalk mechanism is analyzed,and the crosstalk voltage model is established. Through the crosstalk voltage evaluation platform,the influencing factors are evaluated experimentally. Then,the operating principle of the improved active Miller clamp drive circuit is discussed,and the optimized parameter design method is given. Finally,the effect of the improved active Miller clamp method for suppressing crosstalk is experimentally verified. The crosstalk voltage was suppressed from 3.5 V and-3.5 V to 1 V and-1.3 V,respectively,by the improved circuit.关键词
增强型氮化镓/串扰抑制/栅极驱动/高速开关/有源钳位Key words
enhancement-mode GaN (eGaN)/crosstalk suppression/gate driver/high-speed switching/active clamp分类
信息技术与安全科学引用本文复制引用
秦海鸿,汪文璐,卜飞飞,彭子和,刘奥,柏松..基于增强型GaN HEMT的改进型桥臂串扰抑制方法研究[J].南京航空航天大学学报（英文版）,2021,38(5):758-768,11.基金项目
This work was supported by the Foundation of State Key Laboratory of Wide-Bandgap Semi?conductor Power Electronic Devices(No.2019KF001)and the National Natural Science Foundation of China(No.51677089). （No.2019KF001）
