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单晶金刚石异质外延生长过程中的位错行为及其控制工艺研究进展

王伟华 王杨 舒国阳 房诗舒 韩杰才 代兵 朱嘉琦

新型炭材料2021,Vol.36Issue(6):1034-1048,15.
新型炭材料2021,Vol.36Issue(6):1034-1048,15.DOI:10.1016/S1872-5805(21)60096-3

单晶金刚石异质外延生长过程中的位错行为及其控制工艺研究进展

Recent progress on controlling dislocation density and behavior during heteroepitaxial single crystal diamond growth

王伟华 1王杨 1舒国阳 1房诗舒 1韩杰才 1代兵 1朱嘉琦2

作者信息

  • 1. 哈尔滨工业大学,特种环境复合材料技术国家级重点实验室,黑龙江 哈尔滨 150001
  • 2. 哈工大机器人(中山)无人装备与人工智能研究院,广东 中山 528521
  • 折叠

摘要

Abstract

Dislocations are considered crucial linear defects in the synthesis of heteroepitaxial single crystal diamond. Minimiz-ing the dislocation density is a significant challenge for using diamond in electronics. This especially holds for diamond growth on iridium substrates with a large lattice constant difference of 7.1%. We first discuss several aspects of dislocations in heteroepitaxial diamond nucleation and growth, including their generation, types and characterization. Next, methods to reduce dislocation density are summarized, including increasing dislocation reactions (increasing the diamond film thickness and off-axis substrate growth), re-moving dislocations (conventional epitaxial lateral growth, pendeoepitaxial lateral growth and patterned nucleation growth), and oth-er methods (three-dimensional growth, metal-assisted termination and using a pyramidal substrate). The dislocation density has been reduced to 6×105 cm?2, based on the use of a micrometric laser-pierced hole array, a method similar to patterned nucleation growth. To further reduce dislocation density and improve crystal quality, proposed ways of controlling the introduction of dislocations (sub-strate patterning, buffer layer and compliant substrate methods) are highlighted.

关键词

单晶金刚石/异质外延/位错控制/横向外延过度生长/衬底图形化

Key words

Single crystal diamond/Heteroepitaxy/Dislocation reduction/Epitaxial lateral growth/Substrate patterning

分类

化学化工

引用本文复制引用

王伟华,王杨,舒国阳,房诗舒,韩杰才,代兵,朱嘉琦..单晶金刚石异质外延生长过程中的位错行为及其控制工艺研究进展[J].新型炭材料,2021,36(6):1034-1048,15.

基金项目

国家重点研发计划项目(2020YFA0709700,2016YFE0201600),国家杰出青年基金项目(51625201),国家自然科学基金项目(52072087),广东省重点研发计划项目(2020B010169002).This work was supported by the National Key Research and Development Program of China(2020YFA0709700,2016YFE0201600),China Na-tional Funds for Distinguished Young Scientists(51625201),the National Natural Science Foundation of China(52072087),and the Guangdong Key Re-search and Development Program of China(2020B010169002). (2020YFA0709700,2016YFE0201600)

新型炭材料

OA北大核心CSCDCSTPCDSCI

1007-8827

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