半导体学报（英文版）2021，Vol.42Issue(12)：17-23,7.DOI:10.1088/1674-4926/42/12/122001
Quantum transport simulation of the two-dimensional GaSb transistors
Quantum transport simulation of the two-dimensional GaSb transistors
摘要
关键词
2D GaSb/10nm MOSFET/hydrogenation/density functional theory/quantum transport simulationKey words
2D GaSb/10nm MOSFET/hydrogenation/density functional theory/quantum transport simulation引用本文复制引用
Panpan Wang,Songxuan Han,Ruge Quhe..Quantum transport simulation of the two-dimensional GaSb transistors[J].半导体学报（英文版）,2021,42(12):17-23,7.基金项目
This work was supported by the National Natural Sci-ence Foundation of China (No.91964101),the Fund of State Key Laboratory of Information Photonics and Optical Commu-nications (Beijing University of Posts and Telecommunica-tions) and the Research Innovation Fund for College Stu-dents of Beijing University of Posts and Telecommunications. （No.91964101）
