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Fabrication and characterization of AlGaN/GaN HEMTs with high power gain and efficiency at 8 GHz

Quan Wang Fengqi Liu Xiaoliang Wang Xiangang Xu Zhanguo Wang Changxi Chen Wei Li Yanbin Qin Lijuan Jiang Chun Feng Qian Wang Hongling Xiao Xiufang Chen

半导体学报（英文版）2021，Vol.42Issue(12)：49-56,8.
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半导体学报（英文版）2021，Vol.42Issue(12)：49-56,8.DOI:10.1088/1674-4926/42/12/122802

Fabrication and characterization of AlGaN/GaN HEMTs with high power gain and efficiency at 8 GHz

Fabrication and characterization of AlGaN/GaN HEMTs with high power gain and efficiency at 8 GHz

Quan Wang 1Fengqi Liu 2Xiaoliang Wang 3Xiangang Xu 3Zhanguo Wang 4Changxi Chen 5Wei Li 3Yanbin Qin 4Lijuan Jiang 5Chun Feng 1Qian Wang 2Hongling Xiao 3Xiufang Chen4

作者信息

  • 1. State Key Laboratory of Crystal Materials,Shandong University,Jinan 250100,China
  • 2. Institute of Novel Semiconductors,Shandong University,Jinan 250100,China
  • 3. Key Lab of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China
  • 4. Center of Materials Science and Optoelectronics Engineering and School of Microelectronics,University of Chinese Academy of Sciences,Beijing 100049,China
  • 5. Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices,Beijing 100083,China
  • 折叠

摘要

关键词

AlGaN/GaN heterostructure/MOCVD/HEMTs/power amplifier

Key words

AlGaN/GaN heterostructure/MOCVD/HEMTs/power amplifier

引用本文复制引用

Quan Wang,Fengqi Liu,Xiaoliang Wang,Xiangang Xu,Zhanguo Wang,Changxi Chen,Wei Li,Yanbin Qin,Lijuan Jiang,Chun Feng,Qian Wang,Hongling Xiao,Xiufang Chen..Fabrication and characterization of AlGaN/GaN HEMTs with high power gain and efficiency at 8 GHz[J].半导体学报（英文版）,2021,42(12):49-56,8.

基金项目

We would like to thank Prof.Xiaodong Wang for provid-ing the experimental conditions,and Dr.Wei Yan and Mr.Desong Wang for their help in EBL and optical lithography.This work was supported by the National Key Research and De-velopment Program of China (2017YFB0402900),the Key-Area Research and Development Program of Guangdong Province (2019B010126001),the Natural Science Foundation for Distinguished Young Scholars of Shandong Province(ZR2019JQ01),the National Natural Sciences Foundation of China (62074144,52022052,62004118),Key R & D plan of Shandong Province (2019JMRH0901,2019JMRH0201),the Nat-ural Science Foundation of Shandong Province(ZR2019BEM030,ZR2019BEM011). （2017YFB0402900）

半导体学报（英文版）

OACSCD

1674-4926

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