原子能科学技术2021，Vol.55Issue(12)：2113-2120,8.DOI:10.7538/yzk.2021.youxian.0551
CMOS器件单粒子效应电路级建模与仿真
Circuit-level Modeling and Simulation of Single Event Effects in CMOS Electronics
摘要
Abstract
Single event effects (SEE) induced by high energy particles can cause loss of storage data,disorder of program,and even functional error of electronic systems.Modeling and simulation of SEE has attracted much attention in recent years.Circuit-level simulation is to directly introduce radiation effects terms into the common compact model.To reach higher accuracy and more comprehensive analysis of physical mecha-nisms,the dependence of single event transients on strike locations was studied and ana-lytically modeled.The principle and approach flow of the proposed circuit-level SEE simulation were presented.Firstly,basic drift and diffusion collections were considered.Secondly,bias-dependent model could be produced.Then the well potential modulation and the bipolar amplification effects were modeled.Circuit-level simulation results agree well with experiment results.Based on the performed work,transient radiation effects evaluation software (TREES) was developed.The input file should be GDSII layout,which will be parsed and all active region information will be extracted.Other user-defined options include heavy ion setup (LET values),region selection,and stimulus setup,etc.The outputs include waveforms corresponding to each strike,SEE sensitive region mapping,SEE cross section values,etc.The first edition has been integrated into commercial design flow,which can be used as a plug-in software into Cadence tool-bar.The second edition is a stand-alone version with no demand for upstream or down-stream commercial software.This work is useful to produce precise SEE response pre-dictions for circuit blocks or medium-size circuits.TREES software can generate SEE sensitive region much faster than time-consuming device-level simulation.For designers who are familiar with circuit-level simulation,this approach is useful for checking the hardness performance of integrated circuits at design phase.关键词
电路级/建模与仿真/单粒子效应/TREES/CMOS器件Key words
circuit-level/modeling and simulation/single event effects/transient radia-tion effects evaluation software/CMOS electronics分类
信息技术与安全科学引用本文复制引用
丁李利,王坦,张凤祁,杨国庆,陈伟..CMOS器件单粒子效应电路级建模与仿真[J].原子能科学技术,2021,55(12):2113-2120,8.基金项目
Supported by National Natural Science Foundation of China (11690043,61634008) （11690043,61634008）
