原子能科学技术2021，Vol.55Issue(12)：2121-2127,7.DOI:10.7538/yzk.2021.youxian.0501
基于物理的体硅CMOS存储器多位翻转特性电路级仿真分析
Physics-based Circuit-level Analysis of MCU Characteristics in Bulk CMOS SRAM
摘要
Abstract
A circuit-level engineering approach to estimate single-event induced multiple-cell upset (MCU) characteristics in bulk CMOS SRAM was mainly presented in this paper.The proposed multi-nodes charge collection model could evaluate the bit-upset cross sections in the layout-design process considering parasitic-bipolar effects.The impact of different LETs and tilting angles of ion incidence on MCUs were studied and compared to experimental data for the devices manufactured by 65 nm technology.关键词
单粒子效应/多位翻转/电路级仿真/位翻转截面/倾角入射Key words
single event effect/multiple-cell upset/circuit-level simulation/bit-upset cross section/tilt incidence分类
数理科学引用本文复制引用
王坦,丁李利,罗尹虹,赵雯,张凤祁..基于物理的体硅CMOS存储器多位翻转特性电路级仿真分析[J].原子能科学技术,2021,55(12):2121-2127,7.基金项目
Supported by National Natural Science Foundation of China (11690043) （11690043）
