原子能科学技术2021，Vol.55Issue(12)：2128-2134,7.DOI:10.7538/yzk.2021.youxian.0530
8T CMOS图像传感器质子辐照效应研究
Degradation Characteristic of Proton Irradiated 8T CMOS Image Sensor
摘要
Abstract
The proton irradiation experiments with different energy were carried out on the new 8-transistor (8T) CMOS image sensors.As the total ionization dose (TID)effect and displacement damage dose (DDD) effect are caused simultaneously after pro-ton irradiation,the degradation of device performance is more complicated.In order to specifically distinguish the main factor causing the degradation of different parameters,the equivalent TID method and equivalent DDD method were adopted.It is concluded that DDD mainly causes the degradation of dark current,while TID mainly causes the degradation of spectral responsivity,which has a guiding effect on the hardening design of image sensor in the irradiation environment.关键词
CMOS图像传感器/钳位光电二极管/质子辐照/电离总剂量/位移损伤剂量Key words
CMOS image sensor/pinned photodiode/proton irradiation/total ionization dose/displacement damage dose分类
数理科学引用本文复制引用
傅婧,李豫东,冯婕,文林,郭旗..8T CMOS图像传感器质子辐照效应研究[J].原子能科学技术,2021,55(12):2128-2134,7.基金项目
Supported by National Natural Science Foundation of China (11805269),Tianshan Youth Project of Autonomous Region under Grant (2019Q085),Key Deployment Projects of Chinese Academy of Sciences (ZDRW-CN-2020-2) （11805269）
