原子能科学技术2021，Vol.55Issue(12)：2135-2142,8.DOI:10.7538/yzk.2021.youxian.0477
10 MeV质子辐射效应对基于8T-CMOS星敏感器性能影响研究
10 MeV Proton Radiation Effect on 8-Transistor CMOS Star Sensor Performance
摘要
Abstract
The effects of total ionizing dose (TID) and displacement damage from proton irradiation on an 8-transistor global shutter exposure CMOS image sensor (CIS) within a star sensor were presented to analyze the sources of star sensor performance degrada-tion and the decrease of attitude measurement accuracy.The dark current,dark signal non-uniformity,and photon response non-uniformity versus the displacement damage dose (DDD) were investigated.The star diagonal distance accuracy,and star point centroid positioning accuracy of the star sensor versus the DDD were also analyzed.The influence of space radiation on star sensor performance parameter was analyzed innova-tively from a system level point of view.This work lays the foundation for the research of star sensor attitude error measurement and correction technology,and also provides some theoretical basis for the design of high-precision star sensor.关键词
星敏感器/CMOS图像传感器/质子辐照/性能退化Key words
star sensor/CIS/proton irradiation/performance degradation分类
数理科学引用本文复制引用
冯婕,李豫东,傅婧,文林,郭旗..10 MeV质子辐射效应对基于8T-CMOS星敏感器性能影响研究[J].原子能科学技术,2021,55(12):2135-2142,8.基金项目
Supported by National Natural Science Foundation of China (11805269),Tianshan Youth Project of Autonomous Region under Grant (2019Q085),Key Deployment Projects of Chinese Academy of Sciences (ZDRW-CN-2020-2) （11805269）
