原子能科学技术2021，Vol.55Issue(12)：2143-2150,8.DOI:10.7538/yzk.2021.youxian.0535
辐射导致CMOS图像传感器暗电流随机电报信号
Radiation-induced Dark Current Random Telegraph Signal on CMOS Image Sensor
摘要
Abstract
Radiation damage causes the dark current random telegraph signal (DC-RTS)on CMOS image sensors used for space and nuclear applications.Several 0.18 μm CMOS image sensors were irradiated by distinct proton energy and gamma rays,and the characteristic parameters of DC-RTS were analyzed after irradiation.Experimental results show that there are discrepancies between DC-RTS pixels due to displacement damage and to total ionizing dose effects in terms of discrete level,maximum transition amplitude and average time.This is because both kinds of radiation damage induced RTS defects are different.Contrary to the DC-RTS due to displacement damage,total ionizing dose induced DC-RTS features small transition amplitude and low transition fre-quency,which gives rise to the test and analysis challenge for this DC-RTS.Transfer gate voltage during integration has an important impact on total ionizing dose induced DC-RTS.The above work provides an important reference for the better understanding of DC-RTS phenomenon on CMOS image sensor,and the exploration of relevant sup-pression techniques.关键词
CMOS图像传感器/位移损伤效应/电离总剂量效应/暗电流随机电报信号Key words
CMOS image sensor/displacement damage effect/total ionizing dose effect/dark current random telegraph signal分类
信息技术与安全科学引用本文复制引用
刘炳凯,李豫东,文林,周东,郭旗..辐射导致CMOS图像传感器暗电流随机电报信号[J].原子能科学技术,2021,55(12):2143-2150,8.基金项目
Supported by West Light Foundation of Chinese Academy of Sciences (2020-XBQNXZ-004),Key Deployment Projects of Chinese Academy of Sciences (ZDRW-CN-2020-2),Youth Innovation Promotion Association of Chinese Academy of Sciences (2021437),Tian Shan Qing Nian Project (2018Q006) （2020-XBQNXZ-004）
