原子能科学技术2021，Vol.55Issue(12)：2183-2190,8.DOI:10.7538/yzk.2021.youxian.0558
不同温度辐照下栅控双极晶体管的总剂量效应参数退化研究
Investigation of Ionization-induced Parameter Degradation in GLPNP Bipolar Transistors at Different Temperatures
摘要
Abstract
In this paper,the special test structure gated lateral PNP (GLPNP) bipolar transistors,irradiated in different temperatures,were selected to investigate the response mechanism of temperature and dose to radiation damage.The results show that the both of temperature and dose play primary role in determining the dynamic balance of the interface-trap buildup and annealing.Elevating temperature during irradiation can contribute to the increase of degradation at low dose level,and further decrease in temperature will enhance interface-trap buildup at high dose level.关键词
温度效应/总剂量效应/界面陷阱电荷/GLPNP双极晶体管Key words
temperature effect/total ionizing dose effect/interface-trap charge/GLPNP bipolar transistor分类
信息技术与安全科学引用本文复制引用
相传峰,荀明珠,刘海涛,张巍,于刚,郭旗,李小龙,陆妩,王信,刘默寒,于新,蔡娇,张瑞勤,何承发..不同温度辐照下栅控双极晶体管的总剂量效应参数退化研究[J].原子能科学技术,2021,55(12):2183-2190,8.基金项目
Supported by National Natural Science Foundation of China (11805270,12005293),West Light Foundation of Chinese Academy of Sciences (2019-XBQNXZ-B-013,2018-XBQNXZ-B-003) （11805270,12005293）
