原子能科学技术2021，Vol.55Issue(12)：2191-2200,10.DOI:10.7538/yzk.2021.youxian.0563
130 nm SOI D触发器链空间静电放电效应和单粒子效应对比试验研究
Comparative Experimental Study on Space Electrostatic Discharge Effect and Single Event Effect of 130 nm SOI D Flip-flop Chains
摘要
Abstract
Space electrostatic discharge effect (SESD) and single event effect (SEE) are two significant causes of anomalies in satellite devices.However,there are difficulties in precisely distinguishing which effect causes the specific fault in space applications.In the present study work,D flip-flop chains fabricated with 130 nm SOI process technolo-gy were adopted as the device under test (DUT).By utilizing an ESD generator and a pulsed laser experimental facility,the similarities and differences of soft errors caused by SESD and SEE were explored,with experimental variables such as the radiation source energy,test mode,topological structure,and radiation-hardened structure of the device.The test results of the present study can provide an experimental basis for anom-aly identification and protection design.关键词
D触发器/单粒子效应/空间静电放电效应/SOIKey words
D flip-flop/single event effect/space electrostatic discharge effect/SOI分类
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王璇,蔡明辉,陈睿,韩建伟,杨涵,袁润杰,陈钱,梁亚楠,蔡莹,马英起..130 nm SOI D触发器链空间静电放电效应和单粒子效应对比试验研究[J].原子能科学技术,2021,55(12):2191-2200,10.基金项目
Supported by National Natural Science Foundation of China (11875060),Foundation of Key Laboratory of Chinese Academy of Sciences (E12130101S) （11875060）
