原子能科学技术2021，Vol.55Issue(12)：2224-2230,7.DOI:10.7538/yzk.2021.youxian.0548
考虑背栅电流的DSOI MOSFET阈值电压模型研究
Threshold Voltage Model for DSOI MOSFET Considering Back-gate Current
摘要
Abstract
The relationship between the threshold voltage and the back-gate voltage of fully depleted DSOI NMOS is no longer satisfied with a single linear relationship after high total dose irradiation or high back-gate voltage.The coupling mechanism between the threshold voltage and the back-gate voltage will change after the back surface of the fully depleted DSOI device changes from the depletion region to the reversion region.Previous model is not enough to describe this phenomenon.In order to solve this prob-lem,a new threshold voltage model was proposed considering the influence of back-gate current.The coupling relationship between the threshold voltage and back-gate voltage of the devices suffered from a high back-gate voltage or high total dose irradiation can be well fitted.关键词
DSOI/FDSOI/总剂量效应/阈值电压/背栅电压Key words
DSOI/FDSOI/total ionizing dose effect/threshold voltage/back-gate voltage分类
化学化工引用本文复制引用
王可为,卜建辉,韩郑生,李博,黄杨,罗家俊,赵发展..考虑背栅电流的DSOI MOSFET阈值电压模型研究[J].原子能科学技术,2021,55(12):2224-2230,7.基金项目
Supported by Youth Innovation Promotion Association CAS (2020119),National Natural Science Foundation of China(61874135,62011530040) （2020119）
