原子能科学技术2021，Vol.55Issue(12)：2274-2281,8.DOI:10.7538/yzk.2021.youxian.0483
不同能量和注量电子辐照对InP HEMT材料电学特性影响
Effects of Electron Irradiation at Different Energy and Fluences on Electrical Properties of InP HEMT Structure
摘要
Abstract
The InGaAs/InAlAs InP high electron mobility transistor (HEMT) struc-tures with lattice-matched channels were grown by gas source molecular beam epitaxy(GSMBE).Effects of electron irradiation at different energy and fluence on the electrical properties of InP HEMT structures were comprehensively investigated.It was found that high energy electron beam has an obvious effect on the electrical properties of two-dimensional electron gas (2DEG) at the same fluence of 2 × 1015 cm-2.After the fluence exceeding 4 × 1014 cm-2,the 2DEG mobility and density begin to decrease obviously,and did not reach saturation until the fluence was more than 3 × 1015 cm-2.These changes could be mainly attributed to the aggregation of irradiation-induced defects at the channel heterogeneous interface with the increase of displacement damage dose.关键词
InP HEMT/二维电子气/电子辐照/位移损伤Key words
InP HEMT/two-dimensional electron gas/electron irradiation/displace-ment damage分类
信息技术与安全科学引用本文复制引用
周书星,方仁凤,陈传亮,张欣,魏彦锋,曹文彧,类淑来,艾立鹍..不同能量和注量电子辐照对InP HEMT材料电学特性影响[J].原子能科学技术,2021,55(12):2274-2281,8.基金项目
Supported by National Natural Science Foundation of China (11705277,61434006),Doctoral Research Foundation Project of Hubei University of Arts and Science (kyqdf2059038) （11705277,61434006）
