红外与毫米波学报2021，Vol.40Issue(6)：715-720,6.DOI:10.11972/j.issn.1001-9014.2021.06.002
具有优化倍增层InAlAs/InGaAs雪崩光电二极管
InAlAs/InGaAs avalanche photodiode with an optimized multiplication layer
摘要
Abstract
In this paper,the trade-off between gain-bandwidth product(GBP)and dark current of an InAlAs/In? GaAs avalanche photodiode(APD)was studied by optimizing multiplication layer. An optimized multiplication layer with 200 nm was proposed to improve the GBP and reduce the dark current. The fabricated InAlAs/InGaAs APD shows an excellent performance which is consistent with the calculated results. A high responsivity of 0. 85 A/W(M=1)at 1. 55μm and a high GBP of 155 GHz was achieved,whereas the dark current is as low as 19 nA at 0. 9 Vb. This study is significant to the future high-speed transmission application of the avalanche photodiodes.关键词
雪崩光电二极管/增益带宽积/暗电流Key words
avalanche photodiodes(APDs)/gain-bandwidth product(GBP)/dark current分类
数理科学引用本文复制引用
顾宇强,谭明,吴渊渊,卢建娅,李雪飞,陆书龙..具有优化倍增层InAlAs/InGaAs雪崩光电二极管[J].红外与毫米波学报,2021,40(6):715-720,6.基金项目
Supported by the National High Technology Research and Development Program of China(2018YFB2003305),the Key R&D Program of Jiangsu Province(BE2018005),the Science and Technology Service Network Initiative of the Chinese Academy of Sciences(KFJ-STS-ZDTP-086),the Support From SINANO(Y8AAQ11003),Natural Science Foundation of Jiangsu Province(BK20180252) （2018YFB2003305）
