红外与毫米波学报2021，Vol.40Issue(6)：749-753,5.DOI:10.11972/j.issn.1001-9014.2021.06.007
0.825 THz砷化镓单片集成二次谐波混频器
0.825 THz GaAs monolithic integrated sub-harmonic mixer
摘要
Abstract
A sub-harmonic monolithic mixer with a center frequency of 0. 825 THz is developed based on GaAs monolithic microwave integrated circuit technology. The parasitic parameters of the anti-parallel Schottky diode at the terahertz frequency are analyzed to improve the circuit design. The monolithic circuit is suitable for tera? hertz devices with the characteristics of high integration and little fabrication deviation. Meanwhile,the beamlead circuit is used to reduce the loss of substrate and installation position offset. Measured results show that the single- sideband(SSB)conversion loss of the mixer is lower than 33 dB in the frequency range 0. 81～0. 84 THz,and the minimum SSB conversion loss is 28 dB.关键词
反向并联肖特基二极管/插入损耗/集成单片电路/太赫兹混频器Key words
anti-parallel Schottky diode/conversion loss/monolithic microwave integrated circuit/terahertz mixer分类
信息技术与安全科学引用本文复制引用
刘锶钰,张德海,孟进,纪广玉,朱皓天,侯晓翔,张青峰..0.825 THz砷化镓单片集成二次谐波混频器[J].红外与毫米波学报,2021,40(6):749-753,5.基金项目
Youth Innovation Promotion Association CAS(E1213A04) （E1213A04）
